Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
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A. Uedono | S. Chichibu | S. Ishibashi | M. Dickmann | C. Hugenschmidt | H. Miyake | W. Egger | K. Uesugi | K. Shojiki