Fabrication of gated nanosize Si-tip arrays for high perveance electron beam applications

Summary form only given. Nanosize Si-tip arrays with gated electrodes have been fabricated using self-aligned method. In order to have parallel electron beam (high perveance beam) toward the anode plate, we have designed a nanosize tip array with heights of the tip slightly less than that of a gate electrode. High perveance beam is supposed to provide a better focusing of electron beams. Hence, it is important to have a high perveance electron beam for nano lithographic application.