论文信息 - Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

We present a scaling theory for fully-depleted, cylindrical MOSFET's. This theory was derived from the cylindrical form of Poisson's equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET's was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the cylindrical device.

J. Plummer | C. Auth | J.D. Plummer | C.P. Auth

[1] Y. Tosaka,et al. Scaling theory for double-gate SOI MOSFET's , 1993 .

[2] Fumio Horiguchi,et al. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's , 1991 .

[3] Fumio Horiguchi,et al. A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's , 1995 .

[4] T. Sugii,et al. Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's , 1994, IEEE Electron Device Letters.

[5] M. V. Fischetti,et al. Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[6] K. F. Lee,et al. Scaling the Si MOSFET: from bulk to SOI to bulk , 1992 .

[7] James D. Plummer,et al. A 3-D sidewall flash EPROM cell and memory array , 1993 .

[8] K. K. Young. Analysis of conduction in fully depleted SOI MOSFETs , 1989 .

[9] D. Hisamoto,et al. Impact of the vertical SOI 'DELTA' structure on planar device technology , 1991 .

[10] Enrico Sangiorgi,et al. Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements , 1994 .

[11] S. Maegawa,et al. A Vertical /spl Phi/-shape Transistor (V/spl Phi/T) cell for 1 Gbit DRAM and beyond , 1994, Proceedings of 1994 VLSI Technology Symposium.

[12] Fumio Horiguchi,et al. Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits , 1991 .