Development of GaN based MMIC for next generation X-Band space SAR T/R module

This paper deals with the development of GaN-based solution for X Band T/R Module of future SAR generations. In Particular HPA and LNA MMIC solutions have been investigated and produced using a 0.25 μm GaN HEMT process provided by SELEX-SI featured by a 4W/mm power density. Obtained results demonstrate promising performance both in Output Power and Noise characteristics and open the wider perspectives of medium-term GaN adoption in next generation SAR systems. The present work has been carried out in the frame of a general research and development activity sponsored by Italian Space Agency on the implementation of new technologies for next generation Spaceborn SAR.

[1]  M. Oppermann,et al.  T/R-module technologies today and possible evolutions , 2009, 2009 International Radar Conference "Surveillance for a Safer World" (RADAR 2009).

[2]  Olivier Vendier,et al.  GaN for space application: almost ready for flight , 2010, International Journal of Microwave and Wireless Technologies.

[3]  Marziale Feudale,et al.  Highly integrated and solderless LTCC based C-Band T/R Module , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[4]  F. Filicori,et al.  10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications , 2008, 2008 European Microwave Integrated Circuit Conference.

[5]  M.J. Rosker.  Technologies for Next Generation T/R Modules , 2007, 2007 IEEE Radar Conference.