论文信息 - Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers

Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers

We demonstrate the design and implementation of a broad-gain and low-threshold (Jth=860A∕cm2 at 8K) quantum-cascade laser emitting between 3.7 and 4.2μm. The active region design is based on strain-compensated In0.73Ga0.27As–AlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330K with maximum single-facet output peak powers of 6W at 8K and 240mW at 296K. The temperature coefficient T0 is 119K.

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