Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don't have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device presents major circuit design challenges for OTFT-based systems.
[1]
Chris H. Kim,et al.
A 1.1V, 667MHz random cycle, asymmetric 2T gain cell embedded DRAM with a 99.9 percentile retention time of 110µsec
,
2010,
2010 Symposium on VLSI Circuits.
[2]
T. Someya,et al.
An Organic FET SRAM With Back Gate to Increase Static Noise Margin and Its Application to Braille Sheet Display
,
2007,
IEEE Journal of Solid-State Circuits.
[3]
Wei Zhang,et al.
Printed Sub‐2 V Gel‐Electrolyte‐Gated Polymer Transistors and Circuits
,
2010
.
[4]
Robert Blache,et al.
Organic CMOS circuits for RFID applications
,
2009,
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.