Assessing the Effects ofField Plates in an

The contr ibutions of gate-connected and source-connected field plates to extracted devi ce capac itances (gate-source, gate-dra in and drain-source capac itance ) are assessed during the development of an AlGaN/GaN-on-S iC HEMT model. The capac itances due to the presence of a gate field plate are observed to be intr insic in nature, whi le those assoc iated with a source-connected field plate can be regarded as extr insic. Close agreement is observed between measurement and simulat ion of S­ parameters usi ng a devi ce model wh ich cons iders the individual effects ofthe field plates.

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