Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
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R. Quhe | Qiuhui Li | Jie Yang | Linqiang Xu | Shiqi Liu | Chen Yang | Jiachen Ma | Jing Lu | Kechao Tang | Shibo Fang | Ying Li | Baochun Wu