A 40 Gb/s Optical Receiver in 80-nm CMOS for Short-Distance High-Density Interconnects

An optical receiver for short-range optical data communication up to 40 Gb/s is presented. The optimum number of limiting amplifier (LA) stages is calculated to achieve a large gain-bandwidth product. The receiver features an electrical transimpedance gain of 91.4 dBOmega and a bandwidth of 19.2 GHz. For the free-space optical measurements (lambda=1550nm) an InGaAs/lnP photo diode (PD) and the CMOS receiver chip were placed and bonded on a test substrate. At 40 Gb/s an open eye at the output of the receiver is shown at an optical input power of -4.6 dBni. Including the transmitter non-idealities, sensitivities at 20 Gb/s and 30 Gb/s of-8.2 dBni and -7.5 dBm, respectively, at a BER = 10-12 were measured. The complete receiver consumes 56 mW from a 1.1-V supply and occupies a chip area of 230 mum x 220 mum only.

[1]  Stephen P. Boyd,et al.  Bandwidth extension in CMOS with optimized on-chip inductors , 2000, IEEE Journal of Solid-State Circuits.

[2]  B. Law,et al.  Parallel optical interconnect at 10 Gb/s per channel , 2004, 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546).

[3]  K. Murata,et al.  Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 gb/s , 2004, IEEE Journal of Solid-State Circuits.

[4]  G. Agrawal Fiber‐Optic Communication Systems , 2021 .

[5]  F. Ellinger,et al.  A low-power 20-GHz 52-dB/spl Omega/ transimpedance amplifier in 80-nm CMOS , 2004, IEEE Journal of Solid-State Circuits.

[6]  R. John,et al.  120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station , 2004, Journal of Lightwave Technology.

[7]  A. Leven,et al.  Single ended to differential MHEMT transimpedance amplifier with 66 dB-/spl Omega/ differential transimpedance and 50 GHz bandwidth , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[8]  B. Massey,et al.  40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[9]  F. Ellinger,et al.  A 100-mW 4/spl times/10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects , 2005, IEEE Journal of Solid-State Circuits.

[10]  Y. Baeyens,et al.  40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors , 2003 .