论文信息 - Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

In this paper we present an approach to enhance the breakdown characteristics in vertical short channel metal-oxide semiconductor (MOS) devices. A problem of vertical devices with channel length down to 100 nm is the breakdown, which already takes place at very low source-drain voltages. To overcome this problem we have designed a device with an intrinsic silicon region, which shows a significant enhancement of breakdown behaviour. Our devices show a breakdown voltage up to 14 V together with distinct reduction of short channel effects. A further benefit of using the vertical concept is the employment of local channel doping, leading to lower power dissipation in the MOS-device.

[1] Optimization of the channel doping profile of vertical sub-100 nm MOSFETs , 1998 .

[2] I. Eisele,et al. Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices , 1998 .

[3] Harald Gossner,et al. Vertical MOS technology with sub-0.1 /spl mu/m channel lengths , 1995 .

[4] L. Risch,et al. Vertical MOS Transistors with 70nm Channel Length , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.