论文信息 - Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes - 字舞流文

Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes

A. O'Neill | C. M. Johnson | K. Vassilevski | N. Wright | A. Horsfall | C. Blasciuc-Dimitriu