Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects
暂无分享,去创建一个
B. Lai | T. Buonassisi | A. Istratov | O. Vyvenko | R. Schindler | E. Weber | T. Ciszek | Z. Cai | M. Heuer | A. A. Istratov
[1] J. Kalejs,et al. Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length , 2003 .
[2] T. Buonassisi,et al. Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations , 2002 .
[3] T. Buonassisi,et al. X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon , 2002 .
[4] M. Werner,et al. Nanometer-scale metal precipitates in multicrystalline silicon solar cells , 2001 .
[5] W. Schröter,et al. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior , 2001 .
[6] Seifert,et al. Out-diffusion and precipitation of copper in silicon: An electrostatic model , 2000, Physical review letters.
[7] R. Celestre,et al. Synchrotron-based impurity mapping , 2000 .
[8] S. McHugo,et al. Release of metal impurities from structural defects in polycrystalline silicon , 1997 .