Improvements in the determination of interface state density using deep level transient spectroscopy

Deep level transient spectroscopy (DLTS) in the current transient mode has been applied to the measurement of the trap density at the silicon‐silicon dioxide interface. Application of Shockley–Read–Hall theory to the analysis of DLTS data indicates that if the energy dependence of the majority carrier capture cross section is strong, then it is necessary to take it into account if accurate interface state density values are to be obtained. We have used the small pulse trap filling technique to estimate the degeneracy factor and measure the capture cross sections of the interface states, and then applied this information in the calculation of the interface trap density from a conventional large pulse DLTS temperature scan. Very good agreement is obtained with the values extracted from high‐low frequency capacitance‐voltage measurements.

[1]  N. M. Johnson,et al.  Transient capacitance measurements of hole emission from interface states in MOS structures , 1977 .

[2]  M. Kuhn,et al.  A quasi-static technique for MOS C-V and surface state measurements , 1970 .

[3]  J. Simmons,et al.  Theory of transient emission current in MOS devices and the direct determination interface trap parameters , 1974 .

[4]  Kimiyoshi Yamasaki,et al.  Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes , 1979 .

[5]  J. Shappir,et al.  Determination of surface‐state parameters from transfer‐loss measurements in CCD’s , 1979 .

[6]  R. M. Swanson,et al.  Capture‐cross‐section determination by transient‐current trap‐filling experiments , 1981 .

[7]  R. M. Swanson,et al.  Current transient spectroscopy: A high-sensitivity DLTS system , 1980, IEEE Transactions on Electron Devices.

[8]  R. M. Swanson,et al.  Determination of the capture cross section and degeneracy factor of Si‐SiO2 interface states , 1984 .

[9]  L. Terman.  An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .

[10]  Vikram Kumar,et al.  Characterization of Surface States in MOS Capacitors by a Modified DLTS Technique , 1983, April 16.

[11]  Teruaki Katsube,et al.  Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy , 1981 .

[12]  C. C. Wang,et al.  MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel☆ , 1970 .

[13]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[14]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[15]  C. R. Viswanathan,et al.  Determination of interface-state parameters in a MOS capacitor by DLTS , 1980 .

[16]  A. Goetzberger,et al.  ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES , 1970 .

[17]  N. M. Johnson,et al.  Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy , 1982 .

[18]  J. Simmons,et al.  Thermal Bulk Emission and Generation Statistics and Associated Phenomena in Metal-Insulator-Semiconductor Devices under Non-Steady-State Conditions , 1973 .

[19]  Bruce E. Deal,et al.  Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables , 1979 .

[20]  C. R. Viswanathan,et al.  Interface‐state parameter determination by deep‐level transient spectroscopy , 1980 .

[21]  E. H. Nicollian,et al.  The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[22]  J. McVittie,et al.  Measurement of interface defect states at oxidized silicon surfaces by constant‐capacitance DLTS , 1979 .

[23]  G. Declerck,et al.  Measurement of low densities of surface states at the SiSiO2-interface , 1973 .

[24]  D. Biegelsen,et al.  Characteristic electronic defects at the Si‐SiO2 interface , 1983 .

[25]  Vikram Kumar,et al.  Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique , 1983 .

[26]  N. M. Johnson,et al.  Energy‐resolved DLTS measurement of interface states in MIS structures , 1979 .

[27]  A. Goetzberger,et al.  Expedient method of obtaining interface state properties from MIS conductance measurements , 1969 .

[28]  A. Goetzberger,et al.  Interface states in SiSiO2 interfaces , 1972 .