Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

[1]  A. K. Gutakovsky,et al.  Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates , 2016 .

[2]  Jens H. Schmid,et al.  Roadmap on silicon photonics , 2016 .

[3]  O. P. Pchelyakov,et al.  GaAs epitaxy on Si substrates: modern status of research and engineering , 2008 .

[4]  G. Wang,et al.  Improvement of the MOCVD-grown InGaP -on-Si towards high-efficiency solar cell application , 2001 .

[5]  C. Phua,et al.  Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer , 1994 .

[6]  Yoshio Itoh,et al.  Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices , 1989 .

[7]  M. Umeno,et al.  Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition , 1985 .

[8]  Masahiro Akiyama,et al.  Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD , 1984 .

[9]  J. W. Matthews Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metals , 1966 .

[10]  Van de Walle CG Band lineups and deformation potentials in the model-solid theory. , 1989, Physical review. B, Condensed matter.

[11]  H. C. Casey,et al.  Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .