论文信息 - Protection des transistors MOS en régime de deuxième claquage

Protection des transistors MOS en régime de deuxième claquage

2014 A new method for stabilizing the operating point of MOS transistors in the second breakdown state, is proposed : the current crowding mechanism is avoided by using the electrical feed back of a distributed ballast resistance integrated in series with the source electrode. Revue Phys. Appl.17 (1982) 389-391 JUIN 1982, PAGE

P. Rossel | H. Tranduc | H. Tranduc | P. Rossel

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