论文信息 - DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

We report an enhancement-mode InAlN/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be +0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at VGS = 0 V and VDS = 5 V, which shows a truly normal-off state. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InAlN/GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the enhancement-mode device with a gate length of 0.3 μm were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.

[1] Feng Zhihong,et al. A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate , 2011 .

[2] Gu Guodong,et al. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current , 2012 .

[3] C. Gaquiere,et al. Effect of fluoride plasma treatment on InAlN/GaN HEMTs , 2008 .

[4] Guang Chen,et al. A low gate bias model extraction technique for AlGaN/GaN HEMTs , 2006, IEEE Transactions on Microwave Theory and Techniques.

[5] Xiang Gao,et al. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz , 2013, IEEE Electron Device Letters.

[6] Yugang Zhou,et al. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode , 2006, IEEE Transactions on Electron Devices.

[7] Yugang Zhou,et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment , 2005, IEEE Electron Device Letters.

[8] C. Gaquiere,et al. Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? , 2006, 2006 International Electron Devices Meeting.

[9] Wang Chong,et al. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate , 2008 .

[10] Daisuke Ueda,et al. GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).