论文信息 - In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect of annealing treatment on these parameters are characterised to evaluate the potential of these films for MEMS applications.

Hannu Kattelus | Mari Ylönen | Altti Torkkeli

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