Carbon implantation can be effectively used for axial minority charge carriers’ lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centres are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laserplasma ion source at Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO2 laser setup with radiation-flux density of 1011 W/cm2 at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented. INTRODUCTION Many silicon devices, including power MOSFET, IGBT, FRD etc. require applying technologies to control the lifetime of minor charge carriers [1, 2]. As a result, one utilizes Auor Pt-thermodiffusion, radiation, and combined methods. In practice the most widely utilized method is treatment by accelerated electrons, protons or He+ ions. The accelerated (usually 4-8 MeV) electrons provide uniform formation of defects in the volume of semiconductor wafers arranged one after the other (~ 10 pcs). However, achieving small switching times (≤ 5 ns) requires high fluences and irradiation time. Proton irradiation at high fluences leads to doping by shallow donors and some instability of the achieved electrical parameters. Therefore, for these purposes, He+ ion irradiation is often used, which more efficiently produces displacements, and the behavior of device structures after irradiation and subsequent annealing is more stable. Due to the fact that carbon ions also have a relatively large range at relatively low (no more than 20 MeV) accelerating voltages, the possibility to obtain low switch time for reference diode by carbon implantation was investigated. In addition, carbon in sufficiently high concentrations (1016-1017 cm–3) is present in single-crystal silicon, i.e., additional contamination with foreign impurities is minimal. SETUP LAYOUT The setup consists of a laser plasma ion source, a buncher, an accelerating RF resonator, a bending magnet and ion beam transfer system as shown in Fig. 1. Figure 1: I-3 injection complex layout. Ion Source The laser-plasma ion source is based on the pulsed CO2 laser described in [3]. It provides laser beam with high quality of temporal and spatial characteristics: pulse energy – 6 J, peak power – 60–70 MW, FWHM duration – 30 ns, repetition rate – 0.1 Hz, beam spatial profile is close to Gaussian. Its radiation is transfered by flat copper mirrors to the vacuum chamber and focused by combination of spherical and flat mirror. Carbon target surface is irradiated by laser pulses at a radiation flux density of 1011 W/cm2. Generated plasma contains a set of charge states of carbon ions, of which C3+ and C4+ are most represented in terms of the number of particles. Carbon ion beam is extracted from expanding plasma by highvoltage gap with grids, placed 1.68 m away from target surface. Total beam current from the source is measured by current transformer installed behind extraction gap and is shown in Fig. 2. ______________________ † Anton.Losev@itep.ru 12th Int. Particle Acc. Conf. IPAC2021, Campinas, SP, Brazil JACoW Publishing ISBN: 978-3-95450-214-1 ISSN: 2673-5490 doi:10.18429/JACoW-IPAC2021-TUPAB057 MC8: Applications of Accelerators, Technology Transfer, Industrial Relations and Outreach U02 Materials Analysis and Modification TUPAB057 1489 C on te nt fr om th is w or k m ay be us ed un de rt he te rm s of th e C C B Y 3. 0 lic en ce (© 20 21 ). A ny di st ri bu tio n of th is w or k m us tm ai nt ai n at tr ib ut io n to th e au th or (s ), tit le of th e w or k, pu bl is he r, an d D O I