Transient Response of Junction Diodes
暂无分享,去创建一个
The relationship between the performance of junction diodes in pulse circuits and rectifier circuits is developed. Parameters of a lumped model of a junction diode are determined from recovery-time measurements of the diode in a pulse circuit. The response of the diode in single-diode and bridge-rectifier circuits is then predicted by computation using the lumped model. The computed rectification efficiencies and waveforms are found to correspond closely to measured results. Thus a simple lumped model of only two free parameters accurately represents the behavior of junction diodes in pulse and rectifier circuits. The detailed analysis given deals with the short-base diode (the base length being short compared to a diffusion length) though the method is applicable to the long-base case as well.
[1] John G. Linvill. Models of transistors and diodes , 1963 .
[2] B. Lax,et al. Transient Response of a p‐n Junction , 1954 .
[3] W. Ko,et al. The reverse transient behavior of semiconductor junction diodes , 1961, IRE Transactions on Electron Devices.
[4] J. Linvill. Lumped Models of Transistors and Diodes , 1958, Proceedings of the IRE.
[5] Robert H. Kingston,et al. Switching Time in Junction Diodes and Junction Transistors , 1954, Proceedings of the IRE.