论文信息 - White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing

White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing

The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide (a-SiCxOy) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending on excitation energy. Photoluminescence (PL) intensity exhibited good correlation with SiOC bond concentration. At low C (<5%), matrix PL was completely quenched after annealing in O2 even at 500 °C. PL was unaffected by O2 annealing at higher C, and could be enhanced when excited by an ultraviolet laser. These findings are correlated to C- and Si-related O defect centers as luminescence sources in a-SiCxOy.

[1] L. Skuja. Optically active oxygen-deficiency-related centers in amorphous silicon dioxide , 1998 .

[2] W. Shen,et al. Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films , 2008 .

[3] Zhengcao Li,et al. Oxygen defect induced photoluminescence of HfO2 thin films , 2008 .

[4] Jaeyeong Heo,et al. Investigation into the structural and electrical properties of a-SiCO:H as a diffusion barrier to copper , 2006 .

[5] F. Priolo,et al. Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films , 2004 .

[6] V. Lysenko,et al. Color control of white photoluminescence from carbon-incorporated silicon oxide , 2008 .

[7] W. Li,et al. Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films , 2006 .

[8] J. Jorné,et al. Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen , 1999 .

[9] K. Hübner,et al. Optical Phonons in Amorphous Silicon Oxides. I. Calculation of the Density of States and Interpretation of LoTo Splittings of Amorphous Sio2 , 1983 .

[10] A. Kaloyeros,et al. Efficient energy transfer from silicon oxycarbide matrix to Er ions via indirect excitation mechanisms , 2007 .

[11] S. Pantelides,et al. Role of electronic versus atomic relaxations in Stokes shifts at defects in solids. , 2003, Physical review letters.