论文信息 - Two‐dimensional modelling and characterization of gate‐to‐drain overlap contribution on the leakage current of a MOSFET, used as a GCD

Two‐dimensional modelling and characterization of gate‐to‐drain overlap contribution on the leakage current of a MOSFET, used as a GCD

We have studied the contribution of the gate-to-drain overlap on the hot-carrier induced leakage current of an NMOSFET used as gate-controlled diode (GCD) after stress. The experimental GCD characteristic is compared to the model obtained by a home-modified version of MINIMOS. We have introduced an arbitrary or calculated profile of interface states and charges created by hot electrons (models given by C. Hu and P. Roblin, respectively) in order to calculate by fitting their spatial distributions. We have studied also the influence of stress conditions on simulated GCD characteristics.

[1] R. Jérisian,et al. Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment , 1993 .

[2] J. Oualid,et al. Génération interfaciale des transistors NMOS implantes et naturels, à drain simple et doublement diffusé , 1991 .

[3] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .

[4] J. Oualid,et al. Etude du phénomème de vieillissement des transistors MOS microniques par l'analyse des caractéristiques DCG , 1992 .

[5] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[6] Chenming Hu,et al. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[7] S. Bibyk,et al. Simulation of hot-electron trapping and aging of nMOSFETs , 1988 .

[8] G.J. Hu,et al. Design tradeoffs between surface and buried-channel FET's , 1985, IEEE Transactions on Electron Devices.

[9] C. Hu,et al. A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation , 1991 .