论文信息 - Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm–2eV–1 from capacitance-voltage and conductance-voltage measurements.

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