Application of Area-Saving RF Test Structure on Mobility Extraction
暂无分享,去创建一个
[1] Ali M. Mousa,et al. Optical and Optoelectric Properties of PbCdS Ternary Thin Films Deposited by CBD , 2009 .
[3] In Man Kang,et al. Separate Extraction of Gate Resistance Components in RF MOSFETs , 2007, IEEE Transactions on Electron Devices.
[4] T. Alam,et al. Novel RF process monitoring test structure for silicon devices , 2005, IEEE Transactions on Semiconductor Manufacturing.
[5] Hyungcheol Shin,et al. Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs , 2007 .
[7] J.A.M. Geelen,et al. An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.