Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
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Emmanuel Augendre | Yasuhiko Arakawa | Laurent Clavelier | Mohan Rajesh | Denis Guimard | Masao Nishioka | Damien Bordel | Y. Arakawa | E. Augendre | L. Clavelier | M. Nishioka | D. Bordel | D. Guimard | M. Rajesh
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