论文信息 - Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

Single crystal silicon films on top of a buried SiO 2 layer were produced by implanting 1.7x10 18 0 + ions/cm 2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.

H. Baumgart | G. Celler | J. Petruzzello | J. Weber

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