Preparation of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes

Mesa structural n-type nanocrystalline (NC) FeSi2/p-type Si heterojunctions prepared by photolithography were evaluated as near-infrared photodiodes at room temperature. The effects of this structure on the heterojunction photodiode performances were studied. Their junction capacitance density and leakage current density were evidently reduced as compared with those of the normal structural photodiodes. The near-infrared light detection performance was investigated using a 1.31μm laser at room temperature. The detectivity was estimated to be 1.510 8 cm Hz/W at a zero bias, which was clearly improved as compared with that of the normal structural photodiodes. This should be because interface states are reduced accompanied by the interface area reduction. Keyword: Mesa Diode; Nanocrystalline FeSi2; Sputtering, Heterojunction

[1]  Shota Izumi,et al.  Near-Infrared Photodetection of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions at Low Temperatures , 2012 .

[2]  T. Yoshitake,et al.  n-Type Nanocrystalline FeSi2/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering , 2012 .

[3]  C. Dong,et al.  Preparation of amorphous FexSi(1 − x) film using unbalanced magnetron sputtering , 2010 .

[4]  J. Colligon,et al.  Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films , 2010 .

[5]  S. Izumi,et al.  n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature , 2009 .

[6]  Shota Izumi,et al.  Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature , 2009 .

[7]  T. Suemasu,et al.  p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature , 2009 .

[8]  T. Yoshitake,et al.  Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature , 2008 .

[9]  T. Suemasu,et al.  Photoresponse properties of Al/n-beta-FeSi2 Schottky diodes using beta-FeSi2 single crystals , 2007 .

[10]  T. Yoshitake,et al.  Optical properties of nanocrystalline FeSi2 and the effects of hydrogenation , 2006 .

[11]  J. Colligon,et al.  Transition from amorphous to crystalline beta-phase in co-sputtered FeSi2 films as a function of temperature , 2005 .

[12]  J. Colligon,et al.  Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition , 2004 .

[13]  T. Yoshitake,et al.  Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation , 2003 .

[14]  C. Jeynes,et al.  Amorphous-iron disilicide: A promising semiconductor , 2001 .