Characterization of electrically active dopant profiles with the spreading resistance probe
暂无分享,去创建一个
Trudo Clarysse | Wilfried Vandervorst | I. Hoflijk | D. Vanhaeren | W. Vandervorst | T. Clarysse | D. Vanhaeren | I. Hoflijk
[1] Mook-Seng Leong,et al. An efficient numerical scheme for spreading resistance calculations based on the variational method , 1983 .
[2] W. Vandervorst,et al. On the determination of two-dimensional carrier distributions , 1995 .
[3] M. Pawlik,et al. A comparison of electrical and chemical profiling of doping superlattices in silicon , 1990 .
[4] S. C. Choo,et al. On the calculation of spreading resistance correction factors , 1976 .
[5] T. Emeraud,et al. Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI , 2004 .
[6] VERIFICATION OF THE RELATION BETWEEN TWO-PROBE AND FOUR-PROBE RESISTANCES AS MEASURED ON SILICON WAFERS , 1990 .
[7] Wilfried Vandervorst,et al. Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips , 2003 .
[8] Impact of probe penetration on the electrical characterization of sub-50 nm profiles , 2002 .
[9] H. Jorke,et al. Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures , 1987 .
[10] H. Bracht,et al. Spreading-resistance profiling of silicon and germanium at variable temperature , 2002 .
[11] W. Vandervorst,et al. Low weight spreading resistance profiling of ultrashallow dopant profiles , 1998 .
[12] Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐Technology , 1990 .
[13] Trudo Clarysse,et al. Epitaxial staircase structure for the calibration of electrical characterization techniques , 1998 .
[14] H. Henisch. Rectifying Semiconductor Contacts , 1956 .
[15] W. Vandervorst,et al. A Spreading Resistance‐Based Technique for Two‐Dimensional Carrier Profiling , 1993 .
[16] R. G. Mazur,et al. A Spreading Resistance Technique for Resistivity Measurements on Silicon , 1966 .
[17] P. A. Schumann,et al. Spreading resistance correction factors , 1969 .
[18] W. Vandervorst,et al. One‐ and two‐dimensional carrier profiling in semiconductors by nanospreading resistance profiling , 1996 .
[19] Wilfried Vandervorst,et al. Two‐dimensional carrier profiling , 1992 .
[20] M. Current,et al. Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions , 2004 .
[21] C. O. Chui,et al. Activation and diffusion studies of ion-implanted p and n dopants in germanium , 2003 .
[22] Y. Kanda,et al. A graphical representation of the piezoresistance coefficients in silicon , 1982, IEEE Transactions on Electron Devices.
[23] M. Nishihara,et al. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers , 1982, IEEE Transactions on Electron Devices.
[24] C. Osburn,et al. Detection of anomalous defect‐enhanced diffusion using advanced spreading resistance measurements and analysis , 1994 .
[25] W. Vandervorst,et al. Two‐dimensional spreading resistance profiling: Recent understandings and applications , 1994 .
[26] M. Swain,et al. Mechanical deformation in silicon by micro-indentation , 2001 .
[27] W. Vandervorst,et al. Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements , 1994 .
[28] S. M. Hu,et al. Between carrier distributions and dopant atomic distribution in beveled silicon substrates , 1982 .
[29] P. Niedermann,et al. Evaluating probes for “electrical” atomic force microscopy , 2000 .
[30] W. Vandervorst,et al. Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy , 2003 .
[31] W. Vandervorst,et al. Sheet resistance corrections for spreading resistance ultrashallow profiling , 1996 .
[32] Wilfried Vandervorst,et al. Fabrication and characterization of full diamond tips for scanning spreading-resistance microscopy , 2004 .
[33] Quantitative model for current‐voltage characteristics of metal point contacts on silicon rectifying junctions , 1983 .
[34] M. Swain,et al. Nanoindentation-induced deformation of Ge , 2002 .
[35] T. Clarysse,et al. An efficient smoothing algorithm for spreading resistance calculations , 1988 .
[36] H. Jorke,et al. Carrier spilling in spreading resistance analysis of Si layers grown by molecular‐beam epitaxy , 1986 .
[37] W. Vandervorst,et al. Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques , 2003 .
[38] Comparison of contact radius models for ultrashallow spreading resistance profiles , 2000 .
[39] S. C. Choo,et al. Spreading resistance analysis with carrier spilling correction , 1992 .
[40] W. Vandervorst,et al. Stability analysis of correction schemes for spreading resistance measurements , 1990 .
[41] High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon , 1998 .
[42] W. Vandervorst,et al. Need to incorporate the real micro-contact distribution in spreading resistance correction schemes , 2000 .
[43] H. Maes,et al. Spreading resistance correction formula more suited for the Gauss-Laguerre quadrature , 1981 .
[44] W. Vandervorst,et al. Towards a physical understanding of spreading resistance probe technique profiling , 1994 .
[45] F. Priolo,et al. Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si , 1997 .
[46] M. Caymax,et al. Impact of three-dimensional lateral current flow on ultrashallow spreading resistance profiles , 2002 .
[47] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[48] H. G. Drickamer,et al. Pressure induced phase transitions in silicon, germanium and some III–V compounds , 1962 .
[49] L. V. Ruyven,et al. The influence of temperature on spreading resistance measurement , 1972 .
[50] M. Swain,et al. Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters , 1999 .
[51] S. C. Choo,et al. Spreading resistance calculations by the variational method , 1981 .
[52] Spain,et al. Crystal data for high-pressure phases of silicon. , 1986, Physical review. B, Condensed matter.
[53] Trudo Clarysse,et al. Cross-sectional nano-spreading resistance profiling , 1998 .
[54] Marek Pawlik,et al. Spreading resistance:A quantitative tool for process control and development , 1992 .
[55] Wilfried Vandervorst,et al. Fabrication of conductive atomic force microscope probes and their evaluation for carrier mapping , 2003, SPIE Microtechnologies.
[56] H. Bender,et al. Recent insights into the physical modeling of the spreading resistance point contact , 1996 .
[57] Wilfried Vandervorst,et al. Highly conductive diamond probes for scanning spreading resistance microscopy , 2000 .
[58] Trudo Clarysse,et al. Qualification of spreading resistance probe operations , 2000 .
[59] W. Vandervorst,et al. Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects , 1990 .
[60] P. Severin. Measurement of resistivity of silicon by the spreading resistance method , 1971 .
[61] John Albers,et al. The Relation Between Two‐Probe and Four‐Probe Resistances on Nonuniform Structures , 1984 .
[62] G. B. Sinclair,et al. Quasi-static normal indentation of an elasto-plastic half-space by a rigid sphere—II. Results , 1984 .
[63] P. Gaworzewski,et al. The influence of plastic properties of the probe tip/Si contact on spreading resistance analyses , 1996 .
[64] H. L. Berkowitz,et al. An Efficient Integration Technique for Use in the Multilayer Analysis of Spreading Resistance Profiles , 1981 .
[65] F. Llewellyn-Jones,et al. The physics of electrical contacts , 1957 .
[66] R. Dutton,et al. High Speed Implementation and Experimental Evaluation of Multilayer Spreading Resistance Analysis , 1978 .