论文信息 - Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility - 字舞流文

Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility

D. Ritchie | A. Wieck | A. Ludwig | O. Klochan | A. Hamilton | J. Ritzmann | Daisy Q. Wang | Chong Chen | Y. Ashlea Alava