Composition-dependent structures and properties of Bi4Ti3−xZrxO12 thin films
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Hong-Wei Cheng | Nai-Ben Ming | Xiaoning Zhao | Zhiguo Liu | Yidong Xia | Yidong Xia | Zhi-guo Liu | N. Ming | Yan-feng Chen | Shantao Zhang | Yan-Feng Chen | Shan-Tao Zhang | Chun-Hua Song | Jia Wang | Xiaoning Zhao | Hong-Wei Cheng | Jia Wang | Chunkang Song
[1] Y. Kubo,et al. Crystal and electronic structures of Bi4−xLaxTi3O12 ferroelectric materials , 2001 .
[2] R. D. Shannon. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides , 1976 .
[3] James F. Scott,et al. Fatigue and switching in ferroelectric memories: Theory and experiment , 1990 .
[4] Y. Noguchi,et al. Large remanent polarization of vanadium-doped Bi4Ti3O12 , 2001 .
[5] Y. Idemoto,et al. Crystal structure and ferroelectric properties of (Bi,La)4(Ti,Si)3O12 as a bulk ferroelectric material , 2003 .
[6] A. Kingon,et al. Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO2 capacitor heterostructures , 1995 .
[7] R. Katiyar,et al. Large ferroelectric response in Bi4−xNdxTi3O12 films prepared by sol–gel process , 2002 .
[8] H. Ishiwara,et al. Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films , 2003 .
[9] B. S. Kang,et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.
[10] Zhi-guo Liu,et al. Processing- and composition-dependent characteristics of chemical solution deposited Bi_4−xLa_xTi_3O_12 thin films , 2001 .
[11] E. Subbarao,et al. Raman study of low temperature phase transitions in bismuth titanate, Bi4Ti3O12 , 1994 .
[12] C. Stewart. Active ancestral molecules , 1995, Nature.
[13] K. Saito,et al. Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching , 2002 .
[14] M. Osada,et al. Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition , 2002 .
[15] R. Waser,et al. Interface-related decrease of the permittivity in PbZrxTi1-xO3 thin films , 2002 .
[16] U. Gösele,et al. Ferroelectric Bi3.25La0.75Ti3O12 Films of Uniform a-Axis Orientation on Silicon Substrates , 2002, Science.
[17] J. F. Webb,et al. Structural and electrical properties of homologous Srm−3Bi4TimO3m+3 (m=3, 4, 5, and 6) thin films , 2002 .