Influence of topology on the response of lateral magnetotransistors

Abstract Experimental comparative results on the response to magnetic induction of lateral bipolar dual-collector magnetotransistors with different distances between the emitter contact and the base-emitter junction are presented. The reduction effect upon an induced Hall voltage across the junction due to the base contact is also considered. The experimental results confirm that in devices with a far-off emitter contact the emitter injection modulation (EIM) is increased, giving rise to a sensitivity increase of about 20% at 10 mA emitter current for the investigated devices.