论文信息 - Effects of X-ray irradiation on GIDL in MOSFETs

Effects of X-ray irradiation on GIDL in MOSFETs

The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFETs, a forming gas anneal at 400 degrees C completely removes all effects of irradiation on the GIDL.<<ETX>>

A. Balasinski | A. Acovic | C.C.-H. Hsu | T.-P. Ma | L.-C. Hsia

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