Long-range exciton transport by dynamic strain fields in a GaAs quantum well

We present a novel approach for the microscopic confinement and transport of excitons in GaAs quantum wells (QWs) using the moving strain field of a surface acoustic wave (SAW). We demonstrate that the band-gap modulation induced by the SAW strain field traps long-living indirect excitons in a double QW structure within sub-$\ensuremath{\mu}\mathrm{m}$-wide stripes parallel to the acoustic wave fronts and transports them over several hundreds of $\ensuremath{\mu}\mathrm{m}$.