Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor
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[1] M. D. Croon,et al. Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition , 1992 .
[2] E. Armour,et al. Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD , 1991 .
[3] G. Scilla,et al. Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4-y, TMG and AsH3 , 1991 .
[4] G. Scilla,et al. Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy , 1991 .
[5] M. D. Croon,et al. Surface processes during growth of GaAs by MOCVD , 1991 .
[6] L. Keizer,et al. Doping of gallium arsenide in MOCVD: Equilibrium calculations , 1990 .
[7] K. Yamaguchi,et al. Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc , 1989 .
[8] P. Wright,et al. The growth by MOCVD of low-doped p-Type GaAs using a dimethylzinc adduct , 1988 .
[9] J. Hutchby,et al. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy , 1988 .
[10] J. Gibbons,et al. Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model , 1988 .
[11] G. Scilla,et al. The control and modeling of doping profiles and transients in MOVPE growth , 1988 .
[12] L. Chen,et al. Investigation of zinc incorporation in GaAs epilayers grown by low‐pressure metalorganic chemical‐vapor deposition , 1987 .
[13] J. V. D. Ven,et al. Gas phase depletion and flow dynamics in horizontal MOCVD reactors , 1986 .
[14] A. Kozen,et al. Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties , 1986 .
[15] W. Tseng,et al. Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium , 1984 .
[16] T. Nakanisi. The growth and characterization of high quality MOVPE GaAs and GaAlAs , 1984 .
[17] R. Glew. Zinc Doping of MOCVD GaAs , 1984 .
[18] Y. Su,et al. Characterization of p-GaAs by low pressure MOCVD using DEZ as dopant , 1984 .
[19] A. W. Nelson,et al. A study of zinc doping in metallo‐organic chemical vapor deposition of InP , 1984 .
[20] G. Vassilieff,et al. Zn incorporation in Ga1−xAlxAs grown by liquid phase epitaxy and its electrical properties , 1983 .
[21] C. B. Cooper,et al. Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications , 1981 .
[22] G. B. Stringfellow,et al. Deep electron traps in organometallic vapor phase grown AlxGa1−xAs , 1980 .
[23] A. Milnes,et al. Zn diffusion in Al0.7Ga0.3As compared with that in GaAs , 1977 .
[24] H. M. Manasevit,et al. Heteroepitaxial GaAs on Aluminum Oxide The Formation and Electrical Properties of Zn‐ and Cd‐Doped Films , 1972 .