A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35µm and the base contact is 0.3µm wide. The base and emitter contacts present an excellent contact resistivity. The current gain of the 0.35x5µm2 transistor is equal to 21 and the breakdown voltage is equal to 4V. The current gain cut-off frequency and the unilateral gain cut-off frequency are over 300 GHz and 380 GHz respectively. The transistor is fabricated in an industrial environment at OMMIC foundry.

[1]  A. Konczykowska,et al.  A GaAsSb/InP HBT circuit technology , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[2]  T. Sudo,et al.  A numerical analysis of a heterostructure InP/InGaAs photodiode , 1983, IEEE Transactions on Electron Devices.

[4]  M. Iwamoto,et al.  GaAsSb DHBT IC technology for RF and microwave instrumentation , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[5]  O. Drisse,et al.  Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[6]  Z. Griffith,et al.  Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[7]  Wen-Chau Liu,et al.  Characteristics of an InP– InGaAs– InGaAsP HBT , 2004 .

[8]  T. Shibata,et al.  High-bit-rate low-power decision circuit using InP-InGaAs HBT technology , 2005, IEEE Journal of Solid-State Circuits.

[9]  M. Feng,et al.  InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[10]  S. Blayac,et al.  Measurement of base and collector transit times in thin-base InGaAs/InP HBT , 2003, IEEE Electron Device Letters.

[11]  C. Bolognesi,et al.  Above BV/sub CEO/ operation of InP collector HBTs: relevant physics and comparison to other materials such as GaAs and silicon , 2005, International Conference on Indium Phosphide and Related Materials, 2005.