Ultra-low DC power consumptions in monolithic L-band components

A set of monolithic L-band components operating at milliwatt and sub-milliwatt DC power consumptions have been designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded for a monolithic amplifier at a frequency of 1.25 GHz with a cascade of 2 MMIC amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. A four-pole voltage controlled filter with low-power amplifier gain stages showed a loss of 1.6 dB with 15% 3-dB bandwidth on a power consumption of 6.75 mW at 1.575 GHz. A subsystem containing the chips was assembled and tested. The ultra-low power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%. >

[1]  Y. Imai,et al.  Design and performance of low-current GaAs MMICs for L-band front-end applications , 1991 .

[2]  V. Nair.  Low current enhancement mode MMICs for portable communication applications , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

[3]  K. Tanaka,et al.  A Si wide-band MMIC amplifier family for L-S band consumer product applications , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[4]  K. R. Cioffi.  Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[5]  M. Pertus,et al.  A 2 GHz enhancement mode GaAs down converter IC for satellite TV tuner , 1991, IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[6]  K.W. Kobayashi,et al.  GaAs HBT wideband and low power consumption amplifiers to 24 GHz , 1991, IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.