Modelling of perovskite/InGaAs tandem solar cells

Narrow bandgap photovoltaic materials play a crucial role in the development of perovskite tandem cells. The In0.53Ga0.47As with a bandgap of 0.77 eV and excellent optical properties, is a kind of excellent bottom cell material for high efficiency tandem cells, as proven by III-V tandem cells. Here, we design and simulate perovskite/ InGaAs 4-terminal and 2-termianl tandem cells by wxAMPS, with efficiencies reaching 17.85% and 22.71%, respectively.