Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview

The influence of phase-change material composition on amorphous phase stability, crystallization rate, nucleation probability, optical constants and media noise is reported for materials with a growth dominated crystallization mechanism. Two material classes have been studied, doped Sb–Te and doped Sb-based compositions. The material properties of both are greatly influenced by their composition, and in a similar way. For both materials systems hold that the antimony content especially influences the crystallization rate, amorphous phase stability and media noise of the phase-change material. Compositions rich in antimony generally show high crystallization rates, low archival life stability and high media noise. The material properties are further influenced by the presence of dopants like tellurium, germanium, gallium, indium or tin. Germanium and tellurium reduce the crystallization rate, but are essential to increase the amorphous phase stability. Dopants like tin or indium are added to increase the c...

[1]  Anatolii Viacheslavovich Sokolov,et al.  Optical Properties of Metals , 1967 .

[2]  Stanford R. Ovshinsky,et al.  Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors , 1971 .

[3]  F. Wooten.  Chapter 3 – ABSORPTION AND DISPERSION , 1972 .

[4]  F. Wooten,et al.  Optical Properties of Solids , 1972 .

[5]  C. Wickersham,et al.  Impulse stimulated ``explosive'' crystallization of sputter deposited amorphous (In,Ga)Sb films , 1978 .

[6]  N. Kaiser,et al.  Crystallization of amorphous antimony films , 1984 .

[7]  D. Lane,et al.  Nuclear protein with sequence homology to translation initiation factor eIF-4A , 1988, Nature.

[8]  Compact Disc Erasable (CD-E) with Ag–In–Sb–Te Phase-Change Recording Material , 1996 .

[9]  H.J. Borg,et al.  Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization , 2000, 2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491).

[10]  Masud Mansuripur,et al.  Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks. , 2002, Applied optics.

[11]  M. Lankhorst,et al.  Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials , 2002 .

[12]  Liesbeth Van Pieterson,et al.  Prospects of Doped Sb-Te Phase-Change Materials for High-Speed Recording , 2003 .

[13]  Optical properties and crystallization of AgInTeSbGe phase-change optical disk media , 2003 .

[14]  L. V. Pieterson,et al.  Te-free, Sb-based phase-change materials for high-speed rewritable optical recording , 2003 .

[15]  Phase-Change Media for Ultrahigh-Speed Digital Versatile Disc Recording , 2004 .