论文信息 - Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi- insulating GaAs substrate. The results are promising for applications in the important 8 - 12 micrometer atmospheric window.

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