Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$

We report enhanced dc and small-signal RF performance of enhancement-mode (E-mode) metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record on-resistance (Ron) of 0.66 Ω·mm. The device has a maximum drain current (Id) of 1.15 A/mm, a peak transconductance (gm) of 510 mS/mm, and a peak current-gain cutoff frequency (ft) of 122 GHz, with a positive threshold voltage (Vth) of 1.6 V. The device shows improved saturation and pinchoff characteristics compared to the previously reported N-polar E-mode HFETs with a maximum Ion/Ioff ratio of 2.2 × 105.

[1]  M. Rodwell,et al.  Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures , 2011 .

[2]  P. M. Asbeck,et al.  Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz , 2011, IEEE Electron Device Letters.

[3]  U. Mishra,et al.  Anomalous output conductance in N-polar GaN-based MIS-HEMTs , 2011, 69th Device Research Conference.

[4]  Patrick Fay,et al.  245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment , 2011, IEEE Electron Device Letters.

[5]  Nidhi,et al.  Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth , 2011, IEEE Electron Device Letters.

[6]  U. Mishra,et al.  Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz , 2011 .

[7]  Pil Sung Park,et al.  Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs , 2011, IEEE Transactions on Electron Devices.

[8]  Patrick Fay,et al.  High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications , 2010, 2010 International Electron Devices Meeting.

[9]  Adele E. Schmitz,et al.  Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ , 2010 .

[10]  Haifeng Sun,et al.  205-GHz (Al,In)N/GaN HEMTs , 2010, IEEE Electron Device Letters.

[11]  James S. Speck,et al.  Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth , 2010 .

[12]  M. Higashiwaki,et al.  Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN , 2007, IEEE Transactions on Electron Devices.