Current-driven threshold switching of a small polaron semiconductor to a metastable conductor

[1]  E. Weintraub.  Boron: Its Properties and Preparation. , 1913 .

[2]  The Breakdown Effect in Boron Conductors , 1918 .

[3]  A. Hickling,et al.  Electrical conduction of commercial boron crystals , 1939 .

[4]  Y. Toyozawa.  Self-Trapping of an Electron by the Acoustical Mode of Lattice Vibration. I , 1961 .

[5]  S. Ovshinsky.  Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .

[6]  D. Emin,et al.  Studies of small-polaron motion IV. Adiabatic theory of the Hall effect , 1969 .

[7]  A. Engel,et al.  Electrical Switching Phenomena in Transition Metal Glasses under the Influence of High Electric Fields , 1969 .

[8]  D. Emin,et al.  Small-Polaron Hopping Motion in Some Chalcogenide Glasses , 1972 .

[9]  Energy Spectrum of an Electron in a Periodic Deformable Lattice. , 1972 .

[10]  H. J. D. Wit,et al.  The electrical conduction of glassy As2Se3 at high fields , 1972 .

[11]  D. Emin,et al.  Electrical Transport and Structural Properties of Bulk As-Te-I, As-Te-Ge, and As-Te Chalcogenide Glasses , 1973 .

[12]  D. Emin.  On the existence of free and self-trapped carriers in insulators: an abrupt temperature-dependent conductivity transition , 1973 .

[13]  G. R. Miller,et al.  Field-dependent carrier transport in non-crystalline semiconductors , 1973 .

[14]  D. Emin.  Phonon-Assisted Jump Rate in Noncrystalline Solids , 1974 .

[15]  D. Emin.  Phonon-assisted transition rates I. Optical-phonon-assisted hopping in solids , 1975 .

[16]  Charles Howard Henry,et al.  Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission , 1975 .

[17]  R. K. Quinn,et al.  DC electronic transport in binary arsenic chalcogenide glasses , 1975 .

[18]  D. Emin,et al.  Adiabatic Theory of an Electron in a Deformable Continuum , 1976 .

[19]  D. Emin.  The sign of the Hall effect in hopping conduction , 1977 .

[20]  D. Lang,et al.  Nonradiative capture and recombination by multiphonon emission in GaAs and GaP , 1977 .

[21]  N. Mott,et al.  The lifetime of electrons, holes and excitons before self-trapping , 1977 .

[22]  Sir Nevill Mott,et al.  The mechanism of threshold switching in amorphous alloys , 1978 .

[23]  O. A. Golikova.  Semiconductors with complex lattice and the amorphization problem , 1987 .

[24]  Disorder-induced small-polaron formation. , 1994, Physical review. B, Condensed matter.

[25]  D. Emin,et al.  Transport properties of amorphous antimony telluride , 2006 .