论文信息 - The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers - 字舞流文

The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

I. Serenkov | V. Sakharov | B. Ber | N. Sobolev | K. Karabeshkin | V. Mikoushkin | A. Kalyadin | D. Y. Kazantsev | E. V. Sherstnev | N. Shmidt | E. I. Shek