Behavioral comparison of Si and SiC power MOSFETs for high-frequency applications

As SiC MOSFETs have become more popular today, it is important to understand how the new devices are different from the conventional Si MOSFETs, and whether they can directly replace their Si counterparts in converters. This paper answers these questions through comprehensive comparisons of the two technologies in the device static characteristics, switching performances, temperature behaviors, and loss distributions in a high-frequency DC-DC converter. The paper shows that the SiC MOSFETs do exhibit different behaviors than Si in many ways, explains how they are co-related with the device characteristics, and proposes the design considerations when using these new devices in high-frequency converters.

[1]  Florian Krismer,et al.  Modeling and optimization of bidirectional dual active bridge DC-DC converter topologies , 2010 .

[2]  A. Agarwal,et al.  Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[3]  D.M. Divan,et al.  Performance characterization of a high power dual active bridge DC/DC converter , 1990, Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting.

[4]  P. Friedrichs,et al.  Silicon carbide power devices - status and upcoming challenges , 2007, 2007 European Conference on Power Electronics and Applications.

[5]  A. Agarwal,et al.  20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[6]  T. Chow,et al.  Silicon carbide benefits and advantages for power electronics circuits and systems , 2002, Proc. IEEE.

[7]  A. Agarwal,et al.  Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems , 2007, 2007 IEEE Industry Applications Annual Meeting.

[8]  J. Glaser,et al.  Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[9]  D.M. Divan,et al.  A three-phase soft-switched high power density DC/DC converter for high power applications , 1988, Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.

[10]  R. Burgos,et al.  Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs , 2009, 2009 IEEE Energy Conversion Congress and Exposition.