Polysilicon TFT structures for kink-effect suppression

Experimental results and numerical simulations of asymmetric fingered polysilicon thin-film transistors (AF-TFTs) are analyzed in detail. In the AF-TFTs, the transistor channel region is split into two zones with different lengths separated by a floating n/sup +/ region. This structure allows an effective reduction of the kink effect depending on the relative length of the two subchannels, without introducing any additional series resistance. In addition, an appreciable reduction of the leakage current is also observed. The AF-TFTs characteristics have been analyzed by two-dimensional numerical simulation and by modeling the device with two transistors in series. This model clarifies the mechanisms of kink effect suppression in AF-TFT. On the basis of this analysis, two new modified device structures for kink-effect suppression are also proposed and discussed.

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