A novel high RF power MOSFET was developed to integrate a high-power amplifier into 45 nm node CMOS technology. A self-aligned silicide and laterally modulation-doped channel attained the lowest on-resistance of 1.7 Omega-mm with a high breakdown voltage of more than 10 V and successfully achieved the highest output power density of 0.6 W/mm at the maximum power-added efficiency ever reported among CMOS high breakdown voltage transistors. The reduced gate resistance led to a high frequency characteristic of 43 GHz fmax. We also confirmed that the optimized profile of a gate-overlapped lightly doped drain provides sufficient HC and TDDB reliabilities with a gate oxide as thin as a 3.3 V I/O transistor. These results indicate that a single-chip CMOS transceiver with a high-power amplifier can be produced in advanced CMOS fabs.