论文信息 - A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference - 字舞流文

A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference

Hechen Wang | R. Dorrance | B. Carlton | D. Dasalukunte | Renzhi Liu | D. Lake