Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology
暂无分享,去创建一个
John D. Cressler | Hanbin Ying | Jeffrey H. Warner | Zachary E. Fleetwood | Saeed Zeinolabedinzadeh | Ani Khachatrian | Stephen P. Buchner | Dale McMorrow | Ahmet C. Ulusoy | Farzad Inanlou | Yunyi Gong | Nicolas J.-H. Roche | Pauline Paki
[1] C. Poivey,et al. Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions , 2004, IEEE Transactions on Nuclear Science.
[2] M. Bellini,et al. Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics , 2006, IEEE Transactions on Nuclear Science.
[3] R. Reed,et al. Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates , 2000 .
[4] John D. Cressler,et al. An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits , 2013, IEEE Transactions on Nuclear Science.
[5] David R. Greenberg,et al. SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz , 2004, RFIC 2004.
[6] R. Reed,et al. Proton radiation response of SiGe HBT analog and RF circuits and passives , 2001 .
[7] J. Cressler. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .
[8] J. S. Kauppila,et al. Differential Charge Cancellation (DCC) Layout as an RHBD Technique for Bulk CMOS Differential Circuit Design , 2012, IEEE Transactions on Nuclear Science.
[9] V. Pouget,et al. Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL , 2011, IEEE Transactions on Nuclear Science.
[10] C. Poivey,et al. Pulsed-laser testing methodology for single event transients in linear devices , 2004, IEEE Transactions on Nuclear Science.
[11] D. S. Walsh,et al. Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation , 2002 .
[12] R. Girard,et al. A 94 GHz RF Electronics Subsystem for the CloudSat Cloud Profiling Radar , 2003, 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).
[13] John D. Cressler,et al. Radiation Effects in SiGe Technology , 2013, IEEE Transactions on Nuclear Science.
[14] E. O'connor,et al. The CloudSat mission and the A-train: a new dimension of space-based observations of clouds and precipitation , 2002 .
[15] R. Pease,et al. Subbandgap laser-induced single event effects: carrier generation via two-photon absorption , 2002 .
[16] Yann Deval,et al. Investigation of Single-Event Transients in , 2003 .
[17] G. Sadowy,et al. Next generation millimeter-wave radar for safe planetary landing , 2005, 2005 IEEE Aerospace Conference.
[18] John D. Cressler,et al. Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology , 2015, IEEE Transactions on Nuclear Science.
[19] T. Adam,et al. SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.
[20] John D. Cressler,et al. Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs , 2014, IEEE Transactions on Nuclear Science.
[21] M. Turowski,et al. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs , 2009, IEEE Transactions on Nuclear Science.
[22] J. C. Pickel,et al. Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits , 2003 .
[23] Gyorgy Vizkelethy,et al. Design of Digital Circuits Using Inverse-Mode Cascode SiGe HBTs for Single Event Upset Mitigation , 2010, IEEE Transactions on Nuclear Science.
[24] Prabir Saha,et al. A Theory of Single-Event Transient Response in Cross-Coupled Negative Resistance Oscillators , 2010, IEEE Transactions on Nuclear Science.
[25] R. LaBelle. Space Qualification of W-band Devices for the CloudSat Cloud Profiling Radar , 2006, 2006 European Microwave Conference.
[26] John D. Cressler,et al. Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.
[27] David M. Fleischhauer,et al. Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches , 2014, IEEE Transactions on Nuclear Science.
[28] John D. Cressler,et al. Compact, low-power, single-ended and differential SiGe W-band LNAs , 2014, 2014 9th European Microwave Integrated Circuit Conference.
[29] John D. Cressler,et al. On the Potential of SiGe HBTs for Extreme Environment Electronics , 2005, Proceedings of the IEEE.
[30] John D. Cressler,et al. An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier , 2016, IEEE Transactions on Nuclear Science.
[31] Jeffrey H. Warner,et al. A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements , 2014, IEEE Transactions on Nuclear Science.
[32] John D. Cressler,et al. Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator , 2014, IEEE Transactions on Nuclear Science.