论文信息 - MIS Structures On InP Using Oxide Deposited Near 100°C

MIS Structures On InP Using Oxide Deposited Near 100°C

We have deposited silicon dioxide by chemical vapor deposition at pressures of 2 to 12 torr and substrate temperatures as low as 75°C. Properties of the films on n-type InP substrates are reported. Hysteresis of less than 0.1 volts is observed in capacitance-voltage curves for the lowest-temperature depositions. For 100°C depositions surface state densities are in the low 1011 cm-2eV-1 range. Changes in the dielectric properties are observed as deposition temperature drops from 300 to 75°C. Relative dielectric constant increases from 4 to 7 and resistivity decreases from 1015 to 1012 ohm-cm. Electrical properties can be further improved by both RTA and conventional furnace annealing.

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