RF and DC characteristics in Al2O3/Si3N4 insulated‐gate AlGaN/GaN heterostructure field‐effect transistors with regrown ohmic structure
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T. Makimura | T. Enoki | H. Yokoyama | T. Makimōto | Chengxin Wang | M. Hiroki | Takashi Kobayashi | N. Maeda | Takashi Maruyama