Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling

Abstract This paper concerns the reliability of ultrasonically bonded high purity thick aluminium wires at elevated temperature. To date, the evolution of the microstructure of wire bonds during thermomechanical exposure and its influence on reliability have not been fully characterised and understood, particularly as they pertain to thermal cycling regimes which exceed 125 °C. Shear testing, indentation hardness and fine-scale microstructural data are reported here which show that the rate of wear-out can be influenced not only by the thermal cycling range (ΔT), but more importantly by the maximum temperature and duration to which bonds are exposed. There is evidence that significant annealing occurs during thermal cycling regimes with high Tmax values, which results in the removal of some of the damage accumulated and a reduction in the rate of crack propagation. The rate of bond degradation is also found to be faster for 99.99% (4 N) than 99.999% (5 N) pure Al wires. Analysis of the two wire compositions after thermal cycling suggests that this difference could be attributable to a difference in their creep resistance. In conclusion, our findings suggest that high purity Al wire bonds may be suitable for operation at temperatures which exceed 125 °C.

[1]  Wolfgang Fichtner,et al.  Lifetime extrapolation for IGBT modules under realistic operation conditions , 1999 .

[2]  J. C. Zolper,et al.  A review of junction field effect transistors for high-temperature and high-power electronics , 1998 .

[3]  Gerhard Wachutka,et al.  Reliability model for Al wire bonds subjected to heel crack failures , 2000 .

[4]  F. J. Humphreys,et al.  Grain boundary migration and Zener pinning in particle-containing copper crystals , 1996 .

[5]  Gerhard Wachutka,et al.  Crack mechanism in wire bonding joints , 1998 .

[6]  Pradeep Lall,et al.  Development of an alternative wire bond test technique , 1994 .

[7]  P. Sun,et al.  Evolution of microstructure during annealing of a severely deformed aluminum , 2004 .

[8]  Guy Lefranc,et al.  Aluminum bond-wire properties after 1 billion mechanical cycles , 2003, Microelectron. Reliab..

[9]  F. J. Humphreys,et al.  Recrystallization and Related Annealing Phenomena , 1995 .

[10]  M. Petzold,et al.  Mechanical fatigue properties of heavy aluminium wire bonds for power applications , 2008, 2008 2nd Electronics System-Integration Technology Conference.

[11]  S. Sahay,et al.  Accelerated grain growth behavior during cyclic annealing , 2003 .

[12]  C. J. Smithells,et al.  Smithells metals reference book , 1949 .

[13]  Yasushi Yamada,et al.  Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device , 2007, Microelectron. Reliab..

[14]  O. Ambacher,et al.  Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications , 2007 .

[15]  Yang-Tse Cheng,et al.  What is indentation hardness , 2000 .

[16]  Mauro Ciappa,et al.  Selected failure mechanisms of modern power modules , 2002, Microelectron. Reliab..

[17]  J. Suhling,et al.  A review of mechanical properties of lead-free solders for electronic packaging , 2009, Journal of Materials Science.

[18]  Jian Feng Li,et al.  Unusual Observations in the Wear-Out of High-Purity Aluminum Wire Bonds Under Extended Range Passive Thermal Cycling , 2010, IEEE Transactions on Device and Materials Reliability.

[19]  W. Benoît High-temperature relaxations , 2004 .

[20]  T. Langdon,et al.  Flow processes at low temperatures in ultrafine-grained aluminum , 2006 .

[21]  Guo-Quan Lu,et al.  Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly , 2006, IEEE Transactions on Device and Materials Reliability.

[22]  M. E. Kassner,et al.  Current issues in recrystallization: a review , 1997 .

[23]  A. Castellazzi,et al.  Power device stacking using surface bump connections , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[24]  E. Arzt,et al.  Pipe-diffusion ripening of Si precipitates in Al-0.5%Cu-1%Si thin films , 2005 .

[25]  N. Barbosa,et al.  Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects , 2007 .

[26]  Naofumi Yamada,et al.  Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K , 2004 .

[27]  Wayne D. Kaplan,et al.  Detailed investigation of ultrasonic Al–Cu wire-bonds: II. Microstructural evolution during annealing , 2008, Journal of Materials Science.

[28]  H. S. Liu,et al.  Interfacial reaction between Sn–Ag alloys and Ni substrate , 2008 .

[29]  K. Kurzydłowski,et al.  Grain growth in ultrafine grained aluminium processed by hydrostatic extrusion , 2008, Journal of Materials Science.

[30]  A.T. Bryant,et al.  Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation , 2006, IEEE Transactions on Industry Applications.

[31]  Pradeep Lall,et al.  Characterization of functional relationship between temperature and microelectronic reliability , 1995 .

[32]  A. Rivière,et al.  Influence of dislocation networks on the relaxation peaks at intermediate temperature in pure metals and metallic alloys , 2009 .

[33]  M. Ashby,et al.  Deformation-Mechanism Maps: The Plasticity and Creep of Metals and Ceramics , 1982 .

[34]  E. Milke,et al.  High temperature behaviour and reliability of Al-Ribbon for automotive applications , 2008, 2008 2nd Electronics System-Integration Technology Conference.

[35]  S. Jadhav,et al.  Effect of thermo-mechanically induced microstructural coarsening on the evolution of creep response of SnAg-based microelectronic solders , 2005 .

[36]  P. Sofronis,et al.  On the calculation of the matrix-reinforcement interface diffusion coefficient in diffusional relaxation of composite materials at high temperatures , 1996 .

[37]  T. Matsunaga,et al.  Thermal Fatigue Life Evaluation of Aluminum Wire Bonds , 2006, 2006 1st Electronic Systemintegration Technology Conference.

[38]  Nikhilesh Chawla,et al.  Thermomechanical behaviour of environmentally benign Pb-free solders , 2009 .

[39]  Stephen J. Pearton,et al.  Fabrication and performance of GaN electronic devices , 2000 .

[40]  M. Glavanovics,et al.  Impact of thermal overload operation on wirebond and metallization reliability in smart power devices , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

[42]  Johan Liu,et al.  Thermal Cycling Aging Effect on the Shear Strength, Microstructure, Intermetallic Compounds (IMC) and Crack Initiation and Propagation of Reflow Soldered Sn-3.8Ag-0.7Cu and Wave Soldered Sn-3.5Ag Ceramic Chip Components , 2008, IEEE Transactions on Components and Packaging Technologies.