Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling
暂无分享,去创建一个
Li Yang | C. Mark Johnson | J. F. Li | Pearl A. Agyakwa | Martin R. Corfield | V. M. F. Marques | J. Li | C. M. Johnson | Li Yang | M. Corfield | P. Agyakwa | V. Marques
[1] Wolfgang Fichtner,et al. Lifetime extrapolation for IGBT modules under realistic operation conditions , 1999 .
[2] J. C. Zolper,et al. A review of junction field effect transistors for high-temperature and high-power electronics , 1998 .
[3] Gerhard Wachutka,et al. Reliability model for Al wire bonds subjected to heel crack failures , 2000 .
[4] F. J. Humphreys,et al. Grain boundary migration and Zener pinning in particle-containing copper crystals , 1996 .
[5] Gerhard Wachutka,et al. Crack mechanism in wire bonding joints , 1998 .
[6] Pradeep Lall,et al. Development of an alternative wire bond test technique , 1994 .
[7] P. Sun,et al. Evolution of microstructure during annealing of a severely deformed aluminum , 2004 .
[8] Guy Lefranc,et al. Aluminum bond-wire properties after 1 billion mechanical cycles , 2003, Microelectron. Reliab..
[9] F. J. Humphreys,et al. Recrystallization and Related Annealing Phenomena , 1995 .
[10] M. Petzold,et al. Mechanical fatigue properties of heavy aluminium wire bonds for power applications , 2008, 2008 2nd Electronics System-Integration Technology Conference.
[11] S. Sahay,et al. Accelerated grain growth behavior during cyclic annealing , 2003 .
[12] C. J. Smithells,et al. Smithells metals reference book , 1949 .
[13] Yasushi Yamada,et al. Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device , 2007, Microelectron. Reliab..
[14] O. Ambacher,et al. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications , 2007 .
[15] Yang-Tse Cheng,et al. What is indentation hardness , 2000 .
[16] Mauro Ciappa,et al. Selected failure mechanisms of modern power modules , 2002, Microelectron. Reliab..
[17] J. Suhling,et al. A review of mechanical properties of lead-free solders for electronic packaging , 2009, Journal of Materials Science.
[18] Jian Feng Li,et al. Unusual Observations in the Wear-Out of High-Purity Aluminum Wire Bonds Under Extended Range Passive Thermal Cycling , 2010, IEEE Transactions on Device and Materials Reliability.
[19] W. Benoît. High-temperature relaxations , 2004 .
[20] T. Langdon,et al. Flow processes at low temperatures in ultrafine-grained aluminum , 2006 .
[21] Guo-Quan Lu,et al. Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly , 2006, IEEE Transactions on Device and Materials Reliability.
[22] M. E. Kassner,et al. Current issues in recrystallization: a review , 1997 .
[23] A. Castellazzi,et al. Power device stacking using surface bump connections , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.
[24] E. Arzt,et al. Pipe-diffusion ripening of Si precipitates in Al-0.5%Cu-1%Si thin films , 2005 .
[25] N. Barbosa,et al. Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects , 2007 .
[26] Naofumi Yamada,et al. Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K , 2004 .
[27] Wayne D. Kaplan,et al. Detailed investigation of ultrasonic Al–Cu wire-bonds: II. Microstructural evolution during annealing , 2008, Journal of Materials Science.
[28] H. S. Liu,et al. Interfacial reaction between Sn–Ag alloys and Ni substrate , 2008 .
[29] K. Kurzydłowski,et al. Grain growth in ultrafine grained aluminium processed by hydrostatic extrusion , 2008, Journal of Materials Science.
[30] A.T. Bryant,et al. Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation , 2006, IEEE Transactions on Industry Applications.
[31] Pradeep Lall,et al. Characterization of functional relationship between temperature and microelectronic reliability , 1995 .
[32] A. Rivière,et al. Influence of dislocation networks on the relaxation peaks at intermediate temperature in pure metals and metallic alloys , 2009 .
[33] M. Ashby,et al. Deformation-Mechanism Maps: The Plasticity and Creep of Metals and Ceramics , 1982 .
[34] E. Milke,et al. High temperature behaviour and reliability of Al-Ribbon for automotive applications , 2008, 2008 2nd Electronics System-Integration Technology Conference.
[35] S. Jadhav,et al. Effect of thermo-mechanically induced microstructural coarsening on the evolution of creep response of SnAg-based microelectronic solders , 2005 .
[36] P. Sofronis,et al. On the calculation of the matrix-reinforcement interface diffusion coefficient in diffusional relaxation of composite materials at high temperatures , 1996 .
[37] T. Matsunaga,et al. Thermal Fatigue Life Evaluation of Aluminum Wire Bonds , 2006, 2006 1st Electronic Systemintegration Technology Conference.
[38] Nikhilesh Chawla,et al. Thermomechanical behaviour of environmentally benign Pb-free solders , 2009 .
[39] Stephen J. Pearton,et al. Fabrication and performance of GaN electronic devices , 2000 .
[40] M. Glavanovics,et al. Impact of thermal overload operation on wirebond and metallization reliability in smart power devices , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).
[42] Johan Liu,et al. Thermal Cycling Aging Effect on the Shear Strength, Microstructure, Intermetallic Compounds (IMC) and Crack Initiation and Propagation of Reflow Soldered Sn-3.8Ag-0.7Cu and Wave Soldered Sn-3.5Ag Ceramic Chip Components , 2008, IEEE Transactions on Components and Packaging Technologies.