Bias circuit effects on the current‐voltage characteristic of double‐barrier tunneling structures: Experimental and theoretical results
暂无分享,去创建一个
R. C. Potter | H. Hier | R. J. Higgins | K. Martin | H. Hier | C. Y. Belhadj | K. P. Martin | S. Ben Amor | J. J. L. Rascol | E. Hempfling | S. B. Amor | R. Higgins | J. Rascol | C. Belhadj | R. Potter | E. Hempfling
[1] Hui Chun Liu,et al. Simulation of extrinsic bistability of resonant tunneling structures , 1988 .
[2] Tsui,et al. Observation of intrinsic bistability in resonant tunneling structures. , 1987, Physical review letters.
[3] Y. Xian. Relationship between MDS codes and threshold schemes , 1988 .
[4] M. E. Hines,et al. High-frequency negative-resistance circuit principles for Esaki diode applications , 1960 .
[5] F. Sheard,et al. Space‐charge buildup and bistability in resonant‐tunneling double‐barrier structures , 1988 .
[6] J. Harris,et al. Limit cycle oscillation in negative differential resistance devices , 1988 .
[7] Naoki Yokoyama,et al. Self‐consistent analysis of resonant tunneling current , 1986 .
[8] M. Schuller,et al. Large-Signal Circuit Theory for Negative-Resistance Diodes, in Particular Tunnel Diodes , 1961, Proceedings of the IRE.
[9] D. Tsui,et al. Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures , 1988 .
[10] Sollner. Comment on "Observation of intrinsic bistability in resonant-tunneling structures" , 1987, Physical review letters.
[11] Jeff F. Young,et al. Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures , 1988 .